Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4476-4478

  Schuttauf J W A ^a   Der Werf, C H M Van ^a   Van Sark, W G J H M ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Atomic hydrogen; Hot wire CVD; Silicon heterojunction solar cells; Surface pretreatment

Indexed keywords

A-SI:H; AFM; ATOMIC HYDROGEN; ATOMIC HYDROGEN TREATMENT; CHAMBER WALLS; CRYSTALLINE SILICONS; EFFECTIVE LIFETIME; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD; HYDROGEN TREATMENTS; MINORITY CARRIER; SILICON HETEROJUNCTION SOLAR CELLS; SURFACE PASSIVATION; SURFACE PRETREATMENT; TREATMENT TIME;

ATOMS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; HYDROGEN; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE ROUGHNESS; WIRE;

SILICON WAFERS;

EID: 79958839600     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.319     Document Type: Conference Paper

References (18)

1. M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano Jpn. J. Appl. Phys. 31 1992 3518
2. T.H. Wang, E. Iwaniczko, M.R. Page, Q. Wang, D.H. Levi, Y. Yan, Y. Xu, and H.M. Branz Mater. Res. Soc. Symp. Proc. 862 2005 A23.5.1
3. E. Conrad, L. Korte, K.v. Maydell, H. Angermann, C. Schubert, R. Stangl, and M. Schmidt Proc. of EU PVSEC21, Dresden, Germany 2006
4. M.W.M. van Cleef, PhD Thesis, Utrecht University (1998).
5. T.H. Wang, E. Iwaniczko, M.R. Page, D.H. Levi, Y. Yan, H.M. Branz, and Q. Wang Thin Solid Films 501 2006 284
6. D. Muñoz, C. Voz, I. Martin, A. Orpella, J. Puigdollers, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, J. Damon-Lacoste, and P. Roca i Cabarrocas Thin Solid Films 516 2008 761
7. K. Ohdaira, M. Miyamoto, K. Koyama, and H. Matsumura Proc. of IEEE PVSC35, Honolulu, HI USA 2010
8. A. Izumi, H. Sato, S. Hashioka, M. Kudo, and H. Matsumura Microelectron. Eng. 51-52 2000 495
9. H. Matsumura, K. Kamesaki, A. Masuda, and A. Izumi Jpn. J. Appl. Phys. 40 2001 L289
10. K. Uchida, A. Izumi, and H. Matsumura Thin Solid Films 395 2001 75
11. A. Masuda, K. Kamesaki, A. Izumi, and H. Matsumra Mater. Res. Soc. Symp. Proc. 664 2001 A4.5.1
12. H. Umemoto, K. Ohara, D. Morita, Y. Nozaki, A. Masuda, and H. Matsumura J. Appl. Phys. 91 2002 1650
13. S. De Wolf, S. Olibet, and C. Ballif Appl. Phys. Lett. 93 2008 032101
14. J.W.A. Schüttauf, C.H.M. van der Werf, C.O. van Bommel, M.J. Huijzer, W.G.J.H.M. van Sark, J.K. Rath, and R.E.I. Schropp Proc. of EU PVSEC25, Valencia, Spain 2010
15. R.A. Sinton, and A. Cuevas Appl. Phys. Lett. 69 1996 2510
16. H. Nagel, C. Berge, and A.G. Aberle J. Appl. Phys. 91 1999 6218
17. K. Koyama, K. Ohdaira, and H. Matsumura Appl. Phys. Lett. 91 2010 082108
18. K. Koyama, K. Ohdaira, and H. Matsumura Proc. of EU PVSEC25, Valencia, Spain 2010