Twin-free GaAs nanosheets by selective area growth: Implications for defect-free nanostructures

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2506-2515

  Chi, Chun Yung ^a,b   Chang, Chia Chi ^b   Hu, Shu ^c,d   Yeh, Ting Wei ^a,b   Cronin, Stephen B ^a,b   Dapkus, P Daniel ^a,b  

^a University of Southern California   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c California Institute of Technology   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

defect free; GaAs; MOCVD; nanosheet; selective area growth; twin free

Indexed keywords

DEFECT-FREE; GAAS; II-IV SEMICONDUCTORS; MORPHOLOGY TRANSITIONS; NANOSHEET STRUCTURE; SELECTIVE AREA GROWTH; TOTAL SURFACE ENERGY; TWIN-FREE;

DEFECTS; GALLIUM ARSENIDE; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SEMICONDUCTING GALLIUM;

NANOSHEETS;

EID: 84879093807     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400561j     Document Type: Article

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