Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

Nature Communications

Volumn 4, Issue , 2013, Pages

  Peng, Weina ^a   Aksamija, Zlatan ^a   Scott, Shelley A ^a   Endres, James J ^a   Savage, Donald E ^a   Knezevic, Irena ^a   Eriksson, Mark A ^a   Lagally, Max G ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOMATERIAL;

DEFECT; DENSITY; ELECTRIC FIELD; ELECTRONIC EQUIPMENT; NANOTECHNOLOGY; QUANTITATIVE ANALYSIS; SILICON;

ARTICLE; ATOM; MEASUREMENT; MEMBRANE; MOLECULE; NANOMEMBRANE; SEMICONDUCTOR; VACUUM;

EID: 84879017038     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2350     Document Type: Article

References (32)

1. Collins, P. G., Bradley, K., Ishigami, M. & Zettl, A. Extreme oxygen sensitivity of electronic properties of carbon nanotubes. Science 287, 1801-1804 (2000). (Pubitemid 30143962)
2. Cui, Y., Wei, Q. Q., Park, H. K. & Lieber, C. M. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science 293, 1289-1292 (2001). (Pubitemid 32777412)
3. Zhang, P. P. et al. Electronic transport in nanometre-scale silicon-on-insulator membranes. Nature 439, 703-706 (2006).
4. He, T. et al. Controlled modulation of conductance in silicon devices by molecular monolayers. J. Am. Chem. Soc. 128, 14537-14541 (2006). (Pubitemid 44749853)
5. Schedin, F. et al. Detection of individual gas molecules adsorbed on graphene. Nat. Mater. 6, 652-655 (2007). (Pubitemid 47359547)
6. Stern, E. et al. Label-free immunodetection with CMOS-compatible semiconducting nanowires. Nature 445, 519-522 (2007). (Pubitemid 46197629)
7. Cattani-Scholz, A. et al. Organophosphonate-based PNA-functionalization of silicon nanowires for label-free DNA detection. ACS Nano 2, 1653-1660 (2008).
8. Scott, S. A. et al. Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes. ACS Nano 3, 1683-1692 (2009).
9. Lee, C. H. et al. Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment. Nanotechnology 22, 055704 (2011).
10. Sze, S. M. Physics of Semiconductor Devices 2nd edn (John Wiley & Sons, Inc., 1981).
11. Yang, H. G. et al. Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe-and Ge-on-insulator. Appl. Phys. Lett. 93, 072104 (2008).
12. Rodriguez, N., Cristoloveanu, S. & Gamiz, F. Revisited pseudo-MOSFET models for the characterization of ultrathin SOI wafers. IEEE Trans. Electron. Device. 56, 1507-1515 (2009).
13. Yuan, G. D. et al. Tunable electrical properties of silicon nanowires via surface-ambient chemistry. ACS Nano 4, 3045-3052 (2010).
14. Hofmann, P. & Wells, J. W. Surface-sensitive conductance measurements. J. Phys. Condes. Matter 21, 013003 (2009).
15. van der Pauw, L. J. A. Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape. Philips Res. Repts. 13, 220-224 (1958).
16. Kern, W. The evolution of silicon-wafer cleaning technology. J. Electrochem. Soc. 137, 1887-1892 (1990).
17. Chabal, Y. J., Higashi, G. S., Raghavachari, K. & Burrows, V. A. Infrared-Spectroscopy of Si(111) and Si(100) Surfaces after HF Treatment-Hydrogen Termination and Surface-Morphology. J. Vac. Sci. Technol. A-Vac. Surf. Films 7, 2104-2109 (1989)
18. Eastman, D. E. Geometrical and electronic-structure of Si(001) and Si(111) surfaces-a status report. J. Vacuum Sci. Technol. 17, 492-500 (1980). (Pubitemid 11485774)
19. Hamers, R. J., Tromp, R. M. & Demuth, J. E. Scanning tunneling microscopy of Si(001). Phys. Rev. B 34, 5343-5357 (1986).
20. Kentsch, C., Kutschera, M., Weinelt, M., Fauster, T. & Rohlfing, M. Electronic structure of Si(100) surfaces studied by two-photon photoemission. Phys. Rev. B 65, 035323 (2002).
21. Hamers, R. J. & Kohler, U. K. Determination of the Local Electronic Structure of Atomic-Sized Defects on Si(001) by Tunneling Spectroscopy. J. Vac. Sci. Technol. A-Vac. Surf. Films 7, 2854-2859 (1989).
22. Yu, S. Y., Kim, H. & Koo, J. Y. Extrinsic nature of point defects on the Si(001) surface: Dissociated water molecules. Phys. Rev. Lett. 100, 036107 (2008).
23. Arima, K. et al. Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning. Appl. Phys. Lett. 76, 463-465 (2000).
24. Swartzentruber, B. S., Kitamura, N., Lagally, M. G. & Webb, M. B. Behavior of steps on Si(001) as a function of vicinality. Phys. Rev. B 47, 13432-13441 (1993).
25. Heike, S., Watanabe, S., Wada, Y. & Hashizume, T. Electron conduction through surface states of the Si(111)-(7 x 7) surface. Phys. Rev. Lett. 81, 890-893 (1998). (Pubitemid 128628674)
26. Hasegawa, Y., Lyo, I. W. & Avouris, P. Measurement of surface state conductance using STM point contacts. Surf. Sci. 357, 32-37 (1996). (Pubitemid 126400847)
27. Jaschinsky, P., Wensorra, J., Lepsa, M. I., Myslivecek, J. & Voigtlander, B. Nanoscale charge transport measurements using a double-tip scanning tunneling microscope. J. Appl. Phys. 104, 094307 (2008).
28. Wells, J. W., Kallehauge, J. F., Hansen, T. M. & Hofmann, P. Disentangling surface, bulk, and space-charge-layer conductivity in Si(111)-(7 x 7). Phys. Rev. Lett. 97, 206803 (2006).
29. Song, F. et al. Direct measurement of electrical conductance through a self-assembled molecular layer. Nat. Nanotech. 4, 373-376 (2009).
30. Yoo, K. & Weitering, H. H. Electrical conductance of reconstructed silicon surfaces. Phys. Rev. B 65, 115424 (2002).
31. Nakajima, Y., Takeda, S., Nagao, T., Hasegawa, S. & Tong, X. Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-3x/3-Ag. Phys. Rev. B 56, 6782-6787 (1997)
32. Colinge, J. P. Silicon-on-Insulator Technology: Materials to VLSI 2nd edn (Kluwer Academic, 1997).