A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 6, 2013, Pages 1511-1520

  Ohsawa, Takashi ^a   Koike, Hiroki ^a   Miura, Sadahiko ^b   Honjo, Hiroaki ^b   Kinoshita, Keizo ^a   Ikeda, Shoji ^a   Hanyu, Takahiro ^a   Ohno, Hideo ^a   Endoh, Tetsuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Break even time (BET); embedded memory; magnetic tunnel junction (MTJ); nonvolatile memory; power gating; power off time; spin transfer torque random access memory (STT RAM); static noise margin (SNM); static random access memory (SRAM); wake up time

Indexed keywords

BREAK-EVEN TIME (BET); EMBEDDED MEMORY; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE MEMORY; POWER GATINGS; POWER-OFF TIME; SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY (STT-RAM); STATIC NOISE MARGIN; STATIC RANDOM ACCESS MEMORY; WAKE-UP TIME;

CELLS; CYTOLOGY; ELECTRON BEAM LITHOGRAPHY; STATIC RANDOM ACCESS STORAGE;

MAGNETIC DEVICES;

EID: 84878398312     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2253412     Document Type: Article

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