High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

  Ohsawa, Takashi ^a   Iga, Fumitaka ^a   Ikeda, Shoji ^a   Hanyu, Takahiro ^a   Ohno, Hideo ^a   Endoh, Tetsuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

45NM NODE; CELL SIZE; EXPERIMENTAL DATA; FREE LAYERS; HIGH-DENSITY; LOW POWER; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; POWER LINES; RESISTIVE LOADS; SRAM CELL; STATIC NOISE MARGIN; STATIC POWER; STATIC RANDOM ACCESS MEMORY; SWITCHING OPERATIONS; TUNNEL DIELECTRICS;

CELLS; CYTOLOGY;

MAGNETIC DEVICES;

EID: 84857474228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.02BD01     Document Type: Article

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