Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

IEEE Transactions on Electron Devices

Volumn 60, Issue 6, 2013, Pages 1852-1860

  Liu, Bin ^a,b   Gong, Xiao ^a,b   Zhan, Chunlei ^a,b   Han, Genquan ^a,b   Chin, Hock Chun ^c   Ling, Moh Lung ^c   Li, Jie ^c   Liu, Yongdong ^c   Hu, Jiangtao ^c   Daval, Nicolas ^d   Veytizou, Christelle ^d   Delprat, Daniel ^d   Nguyen, Bich Yen ^d   Yeo, Yee Chia ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NANOMETRICS INC   (United States)

^d SOITEC Parc Technologique des Fontaines   (France)

Author keywords

Fin doping; FinFETs; GeOI; Germanium; metal S D; MuGFETs; oCD

Indexed keywords

DOPING CONCENTRATION; ELECTRICAL PERFORMANCE; FINFETS; GEOI; GERMANIUM-ON-INSULATOR; MUGFETS; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; OCD;

FINS (HEAT EXCHANGE); GERMANIUM;

FIELD EFFECT TRANSISTORS;

EID: 84878131530     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2258924     Document Type: Article

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