High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 165-166

  Ikeda, Keiji ^a   Ono, Mizuki ^a   Kosemura, Daisuke ^b   Usuda, Koji ^a   Oda, Minoru ^a   Kamimuta, Yuuichi ^a   Irisawa, Toshifumi ^a   Moriyama, Yoshihiko ^a   Ogura, Atsushi ^b   Tezuka, Tsutomu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CONTACT RESISTIVITIES; GE CONDENSATION; HIGH MOBILITY; HIGH SATURATION CURRENT; LOW-PARASITIC; METAL SOURCE/DRAIN; NANOWIRE MOSFETS; P-MOSFETS; RESISTANCE CHARACTERISTICS; SATURATION DRAIN CURRENT; SCHOTTKY CONTACTS; STRAINED-GE;

MOSFET DEVICES; NANOWIRES;

GERMANIUM;

EID: 84866542813     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242513     Document Type: Conference Paper

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