Accelerated stress test assessment of through-silicon via using RF signals

IEEE Transactions on Electron Devices

Volumn 60, Issue 6, 2013, Pages 2015-2021

  Okoro, Chukwudi ^a   Kabos, Pavel ^a   Obrzut, Jan ^a   Hummler, Klaus ^b   Obeng, Yaw S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SEMATECH   (United States)

Author keywords

Failure analysis; radio frequency (RF); thermal cycling; through silicon via (TSV)

Indexed keywords

ACCELERATED STRESS; EARLY FAILURE; RADIO FREQUENCIES; RADIOFREQUENCY SIGNALS; THERMAL CYCLE; THROUGH SILICON VIAS; THROUGH-SILICON VIA; TRANSMISSION CHARACTERISTICS;

ELECTRONICS PACKAGING; FAILURE ANALYSIS; RELIABILITY ANALYSIS;

THERMAL CYCLING;

EID: 84878119047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2257791     Document Type: Article

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