Low temperature growth of Ge1 - xSnx buffer layers for tensile-strained Ge layers

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Shimura, Yosuke ^a   Tsutsui, Norimasa ^a   Nakatsuka, Osamu ^a   Sakai, Akira ^b   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Epitaxial growth; Germanium; Point defect; Silicon; Tensile strain; Tin

Indexed keywords

CRYSTALLINE QUALITY; CRYSTALLINITIES; GE SUBSTRATES; LATERAL PROPAGATION; LOW TEMPERATURE GROWTH; STRAIN VALUES; STRAIN-RELAXED; STRAINED-GE;

BUFFER LAYERS; DEFECTS; GERMANIUM; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRAIN; TITANIUM COMPOUNDS;

TIN;

EID: 73649148733     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.044     Document Type: Article

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