Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Materials Science in Semiconductor Processing

Volumn 16, Issue 3, 2013, Pages 987-991

  Hu, Shaoxu ^a   Han, Peide ^a   Mi, Yanhong ^a   Xing, Yupeng ^a   Liang, Peng ^a   Fan, Yujie ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Damage; Ion implantation; Optoelectronic characteristics; Phase transition; Silicon; Thermal annealing

Indexed keywords

ANNEALING TEMPERATURES; DAMAGE; EXTERNAL QUANTUM EFFICIENCY; OPTIMAL ANNEALING; OPTOELECTRONIC CHARACTERISTICS; OPTOELECTRONIC PROPERTIES; RECTIFYING BEHAVIORS; THERMAL-ANNEALING;

ION IMPLANTATION; PHASE TRANSITIONS; QUANTUM EFFICIENCY; SELENIUM; SILICON;

ANNEALING;

EID: 84877580391     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.02.008     Document Type: Article

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