Correlation between electrical properties and point defects in NiO thin films

Metals and Materials International

Volumn 18, Issue 6, 2012, Pages 1003-1007

  Kwon, Yong Hun ^a   Chun, Sung Hyun ^a   Han, Jae Hee ^b   Cho, Hyung Koun ^a  

^a Sungkyunkwan University   (South Korea)

^b Gachon University   (South Korea)

Author keywords

defects; electrical properties; oxides; seminconductors; thin films

Indexed keywords

ARGON; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; NICKEL OXIDE; OXIDE MINERALS; OXIDES; POINT DEFECTS; SEMICONDUCTOR DIODES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CONDUCTION MECHANISM; CURRENT VOLTAGE CURVE; HETEROJUNCTION DIODES; P-TYPE CHARACTERISTICS; SEEBECK COEFFICIENT MEASUREMENT; SEMI-INSULATING; SEMINCONDUCTORS; VISIBLE REGION;

THIN FILMS;

EID: 84877579375     PISSN: 15989623     EISSN: 20054149     Source Type: Journal    
DOI: 10.1007/s12540-012-6012-5     Document Type: Article

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