Intrinsic P type ZNO films deposited by RF magnetron sputtering

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 2, 2009, Pages 813-816

  Wang, Jinzhong ^a   Martins, Rodrigo ^a   Barradas, N P ^c   Alves, E ^c   Monteiro, T ^b   Peres, M ^b   Elamurugu, Elangovan ^a   Fortunato, Elvira ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Hall measurements; Photoluminescence; Zinc oxide thin films

Indexed keywords

ANNEALED FILMS; ANNEALED SAMPLES; AS-GROWN; AS-GROWN FILMS; C-PLANE SAPPHIRE SUBSTRATES; CRYSTALLINITY; ELASTIC RECOIL DETECTION ANALYSIS; HALL COEFFICIENT; HALL MEASUREMENTS; OPTICAL ACTIVE CENTRES; P-TYPE ZNO FILM; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; RF-MAGNETRON SPUTTERING; RUTHERFORD BACK-SCATTERING; XRD STUDIES; ZINC OXIDE THIN FILMS; ZNO FILMS;

ANNEALING; CORUNDUM; LITHIUM COMPOUNDS; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 67349240322     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.C030     Document Type: Conference Paper

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