Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering

Materials Science in Semiconductor Processing

Volumn 16, Issue 3, 2013, Pages 997-1001

  Kim, Doo Soo ^a   Park, Ji Hyeon ^a   Lee, Su Jeong ^a   Ahn, Kyung Jun ^b   Lee, Mi So ^c   Ham, Moon Ho ^c   Lee, Woong ^d   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b SNTEK Co Ltd   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d Changwon National University   (South Korea)

Author keywords

Al doped ZnO (AZO); Oxygen argon ratio; Pulsed DC magnetron sputtering; Transparent conductive oxide

Indexed keywords

AL-DOPED ZNO; ELECTRICAL CONDUCTION; ELECTRICAL RESISTIVITY; METALLIC CONDUCTION; OXYGEN CONCENTRATIONS; PULSED DC MAGNETRON SPUTTERING; TRANSPARENT CONDUCTIVE FILMS; TRANSPARENT CONDUCTIVE OXIDES;

CONDUCTIVE FILMS; DEPOSITS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPTICAL FILMS; OXYGEN SUPPLY; SPECTROSCOPIC ANALYSIS; ZINC OXIDE;

ALUMINUM;

EID: 84877577787     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.02.012     Document Type: Article

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