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AIP Advances

Volumn 3, Issue 4, 2013, Pages

Fabrication and electrical properties of LiNbO3/ZnO/n-Si heterojunction

(7) Hao, Lanzhong a Li, Yanrong a Zhu, Jun a Wu, Zhipeng a Deng, Jie a Liu, Xingzhao a Zhang, Wanli a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CAPACITANCE; FABRICATION; FERROELECTRIC FILMS; FERROELECTRICITY; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LITHIUM COMPOUNDS; NIOBIUM COMPOUNDS; OXIDE MINERALS; ZINC OXIDE;

CAPACITANCE VOLTAGE; FERROELECTRIC POLARIZATION; HYSTERETIC CHARACTERISTICS; LITHIUM NIOBATE; PHOTORESPONSE CHARACTERISTICS; PULSE LASER DEPOSITION; SI (100) SUBSTRATE; STRUCTURAL COMPOSITION;

SILICON;

EID: 84877337262 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4800705 Document Type: Article

Times cited : (11)

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