Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O 3/SiO2 stack

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1614-1619

  Xu, Zhen ^a,b   Kaczer, Ben ^a   Johnson, Jo ^a   Wouters, Dirk ^a   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITANCE; CAPACITORS; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICA; STRESSES; STRONTIUM COMPOUNDS; THRESHOLD VOLTAGE;

CHARGE TRAPPING; FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFET); GATE STACK; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) CAPACITORS;

ELECTRON TRAPS;

EID: 4043178553     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766085     Document Type: Article

References (21)

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, http://public.itrs.net/for the most recent updates.
2. Hiroshi Ishiwara, Tech. Dig.-Int. Electron Devices Meet., 33.1.1, Washington, DC, 2001.
3. T. P. Ma and J.-P. Han, IEEE Electron Device Lett. 23, 386 (2002).
4. W.-J. Lee, C.-H. Shin, C.-R. Cho, J.-S. Lyu, B.-W. Kim, B.-G. Yu, and K.-I. Cho, Jpn. I Appl. Phys., Part 1 38, 2039 (1999).
5. S.-Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974).
6. K. Sugibuchi, Y. Kurogi, and N. Erido, J. Appl. Phys. 46, 2877 (1975).
7. M. Y. Yang, S. B. Chen, A. Chin, C. L. Sun, B. C. Lan, and S. Y. Chen, Tech. Dig. - Int. Electron Devices Meet., 36.3.1, Washington, DC, 2001.
8. J.-P. Han and T. P. Ma, Appl. Phys. Lett. 72, 1185 (1998).
9. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
10. M. Rosmeulen, E. Sleeckx, and K. De Meyer, "Electrical characterization of silicon-rich-oxide based memory cells using pulsed current-voltage techniques," presented at the Proceeding of 32th Europe Solid-State Device Research Conference, 2002.
11. B.-C. Lan, C.-Y. Huang, and S.-Y. Chen, J. Appl. Phys. 94, 6735 (2003).
12. T. Yamaguchi, M. Koyama, A. Takashima, and S.-I. Takagi, Jpn. J. Appl. Phys., Part 1 39, 2058 (2000).
13. S. B. Xiong and S. Sakai, Appl. Phys. Lett. 75, 1613 (1999).
14. 2 gate dielectrics," Presented at IEEE International Reliability Physics Symposium Proceeding, 2003.
15. S. Zafar, A. Callegari, E. Gusev, and M. V. Fischetti, J. Appl. Phys. 93, 9298 (2003).
16. S. Harasek, A. Lugstein, H. D. Wanzenboeck, and E. Bertagnolli, Appl. Phys. Lett. 83, 1400 (2003).
17. D. J. Dumin and J. R. Maddux, IEEE Trans. Electron Devices 40, 986 (1993).
18. D. R. Wolters an J. J. van der Schoot, J. Appl. Phys. 58, 831 (1985).
19. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
20. H. M. Duiker, P. D. Beale, J. F. Scott, C. A. P. de Araujo, B. M. Melnick, J. D. Cuchiaro, and L. D. McMillan, J. Appl. Phys. 68, 5783 (1990).
21. S.-M. Koo, S. Khartsev, C.-M. Zetteriling, A. Grishin, and M. Ostling, Appl. Phys. Lett. 83, 3975 (2003).