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Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure

(8) Hao, Lanzhong a,b Zhu, Jun a Luo, Wenbo a Zeng, Huizhong a Li, Yanrong a Huang, Wen a Liao, Xiuwei a Zhang, Ying a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

b CHINA UNIVERSITY OF PETROLEUM (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CAPACITANCE VOLTAGE CHARACTERISTIC; FERROELECTRIC POLARIZATION; FORWARD BIAS; HETEROSTRUCTURES; MEMORY DEVICE; MEMORY EFFECTS; MEMORY WINDOW; METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE; SWITCHABLE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRON GAS; FERROELECTRICITY; GALLIUM NITRIDE; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS; WINDOWS;

FERROELECTRIC FILMS;

EID: 71949129879 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272108 Document Type: Article

Times cited : (23)

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