Specific mechanism for strain relaxation dependent on crystallization route of LiNbO3 films on Al2 O3 (0001)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 2, 2008, Pages 281-287

  Akazawa, Housei ^a   Shimada, Masaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTALLIZATION; LITHIUM COMPOUNDS; SPUTTER DEPOSITION; STRAIN RELAXATION;

ATOMIC-SCALE GRAPHO EPITAXY; LATTICE DISORDER; POSTANNEALING AMORPHOUS FILMS; PSEUDOMORPHIC GROWTH;

THIN FILMS;

EID: 40249115038     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2841486     Document Type: Article

References (25)

1. R. Takada, M. Ohnishi, H. Hayakawa, and N. Mikoshiba, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1655024 24, 490 (1974).
2. T. Kanata, Y. Kobayashi, and K. Kubota, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.339385 62, 2989 (1987).
3. S. Schwyn, H. W. Lehmann, and R. Widmer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351793 72, 1154 (1992).
4. J. J. Kingston, D. K. Fork, F. Leplingard, and F. A. Ponce, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 341, 289 (1994).
5. A. A. Wernberg, H. J. Gysling, A. J. Filo, and T. N. Blanton, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.108528 62, 946 (1993).
6. Z. Lu, R. Hiskes, S. A. DiCarolis, R. K. Route, R. S. Feigelson, F. Leplingard, and J. E. Fouquet, J. Mater. Res. 9, 2258 (1994). 0884-2914
7. S. Y. Lee and R. S. Feigelson, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(97)00593-9 186, 594 (1998).
8. Y. Shibata, K. Kaya, K. Akashi, M. Kanai, T. Kawai, and S. Kawai, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.358900 77, 1498 (1995).
9. M. Haruna, H. Ishizuki, J. Tsutsumi, Y. Shimaoka, and H. Nishihara, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.34.6084 34, 6084 (1995).
10. S. H. Lee, T. K. Song, T. W. Noh, and J. H. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.115486 67, 43 (1995).
11. S. Yamada, Y. Nishibe, S. Ohtsubo, Y. Yonezawa, A. Morimoto, T. Shimizu, K. Ishida, and Y. Masaki, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.41.L275 41, L275 (2002).
12. P. G. Clem and D. A. Payne, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 361, 179 (1995).
13. K. Nashimoto, H. Moriyama, and E. Osakabe, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.35.4936 35, 4936 (1996).
14. T. A. Derouin, C. D. E. Lakeman, X. H. Wu, J. S. Speck, and F. F. Lange, J. Mater. Res. JMREEE 0884-2914 12, 1391 (1997).
15. H. Akazawa and M. Shimada, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1764817 22, 1793 (2004).
16. H. Akazawa and M. Shimada, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2204817 99, 124103 (2006).
17. A. G. Cullis, D. J. Robbins, S. J. Barnett, and A. J. Pidduck, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.578984 12, 1924 (1994).
18. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.72.3570 72, 3570 (1994).
19. E. A. Fitzgerald, S. B. Samavedam, Y. H. Xie, and L. M. Giovane, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580428 15, 1048 (1997).
20. H. Akazawa and M. Shimada, J. Mater. Res. JMREEE 0884-2914 10.1557/jmr.2007.0208 22, 1726 (2007).
21. H. Akazawa and M. Shimada, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.07.044 270, 560 (2004).
22. S. Miyazawa and M. Mukaida, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111663 64, 2160 (1994).
23. M. W. Geis, D. C. Flanders, and H. I. Smith, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.90936 35, 71 (1979).
24. S. Habelitz, T. Hoche, R. Hergt, G. Carl, and C. Russel, Acta Mater. ACMAFD 1359-6454 10.1016/S1359-6454(99)00135-4 47, 2831 (1999).
25. C. P. Flynn, MRS Bull. MRSBEA 0883-7694 16, 30 (1991).