On the capacitance-voltage characteristics of Al/BaTiO3/GaN MFS structures

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1176-1179

  Senthil Kumar, M ^a   Sumathi, R R ^a   Giridharan, N V ^a   Jayavel, R ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

A1. X ray diffraction; B1. Gallium compounds

Indexed keywords

BARIUM TITANATE; CAPACITANCE; ELECTRIC INSULATORS; ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRICITY; GALLIUM NITRIDE; PERMITTIVITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE CHARACTERISTICS;

MIM DEVICES;

EID: 0036530989     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02152-2     Document Type: Article

References (12)