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Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

ZnO as a buffer layer for growth of BiFeO3 thin films

(2) Wu, Jiagang a Wang, John a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CONDUCTION MECHANISM; ELECTRICAL CONDUCTION; FATIGUE ENDURANCES; FERROELECTRIC BEHAVIOR; FOWLER-NORDHEIM TUNNELING; HETEROSTRUCTURES; HYSTERESIS BEHAVIOR; MULTIFERROICS; OFF-AXIS; POLARIZATION REVERSALS; RADIO FREQUENCY MAGNETRON SPUTTERING; REMANENT POLARIZATION; RESISTIVE SWITCHING BEHAVIORS; SI (100) SUBSTRATE; SPACE CHARGE LIMITED CONDUCTION; TEMPERATURE RANGE; THERMAL EXCITATION OF CARRIERS; ZNO; ZNO BUFFER LAYER; ZNO THIN FILM;

BUFFER LAYERS; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; DISTILLATION; HYSTERESIS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; OXYGEN VACANCIES; POLARIZATION; SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION;

ZINC OXIDE;

EID: 77955864490 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3460108 Document Type: Article

Times cited : (52)

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