Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

Journal of Applied Physics

Volumn 113, Issue 16, 2013, Pages

  Sleiman, A ^a   Sayers, P W ^a   Mabrook, M F ^a  

^a BANGOR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ELECTRODES; COUNTER ELECTRODES; ELECTROCHEMICAL METALLIZATION (ECM); IV CHARACTERISTICS; NON-VOLATILE MEMORY; RELIABLE RETENTION; RESISTIVE SWITCHING; SCHOTTKY CONTACTS;

THERMIONIC EMISSION;

SWITCHING SYSTEMS;

EID: 84877256190     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803062     Document Type: Article

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