Investigation of deep-level luminescence in In0.07Ga 0.93N:Mg

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 470-474

  Han, B ^a   Ulmer, M P ^b   Wessels, B W ^a  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

InxGa1 xN; Photoluminescence; Self compensation; Wide gap semiconductors

Indexed keywords

AMMONIA; ANNEALING; DEPOSITION; ELECTRIC CONDUCTIVITY; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUENCHING; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; VAPOR PRESSURE;

SELF COMPENSATION; SELF-COMPENSATION; WIDE GAP SEMICONDUCTORS;

INDIUM COMPOUNDS;

EID: 0346055285     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.038     Document Type: Conference Paper

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