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Physical Review B - Condensed Matter and Materials Physics

Volumn 87, Issue 16, 2013, Pages

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

(8) Reyes, Kristofer a Smereka, Peter a Nothern, Denis a Millunchick, Joanna Mirecki a Bietti, Sergio b Somaschini, Claudio b Sanguinetti, Stefano b Frigeri, Cesare c

a UNIVERSITY OF MICHIGAN (United States)

b UNIVERSITY OF MILANO BICOCCA (Italy)

c IMEM CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876187523 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.87.165406 Document Type: Article

Times cited : (81)

References (41)

1
- 0002747118
- PHTOAD 0031-9228 10.1063/1.881393
- M. Kastner, Phys. Today PHTOAD 0031-9228 10.1063/1.881393 46 (1), 24 (1993).
- (1993) Phys. Today , vol.46 , pp. 24
- Kastner, M.¹

2
- 0242287935
- Shape Effects on Electronic States of Nanocrystals
- DOI 10.1021/nl034488o
- J. Li and Lin-Wang, Nano Lett. NALEFD 1530-6984 10.1021/nl034488o 3, 1357 (2003). (Pubitemid 37346974)
- (2003) Nano Letters , vol.3 , Issue.10 , pp. 1357-1363
- Li, J.¹ Wang, L.-W.²

3
- 0026413132
- New MBE growth method for InSb quantum well boxes
- DOI 10.1016/0022-0248(91)91064-H
- N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(91)91064-H 111, 688 (1991). (Pubitemid 21664913)
- (1991) Journal of Crystal Growth , vol.111 , Issue.1-4 , pp. 688-692
- Koguchi Nobuyuki¹ Takahashi Satoshi² Chikyow Toyohiro³

4
- 0001597126
- 0734-211X 10.1116/1.586789
- N. Koguchi, K. Ishige, and S. Takahashi, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.586789 11, 787 (1993).
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 787
- Koguchi, N.¹ Ishige, K.² Takahashi, S.³

5
- 0027589857
- JAPLD8 0021-4922 10.1143/JJAP.32.2052
- N. Koguchi and K. Ishige, Jpn. J. Appl. Phys. JAPLD8 0021-4922 10.1143/JJAP.32.2052 32, 2052 (1993).
- (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 2052
- Koguchi, N.¹ Ishige, K.²

6
- 0342758562
- JAPLD8 0021-4922 10.1143/JJAP.39.L79
- K. Watanabe, N. Koguchi, and Y. Gotoh, Jpn. J. Appl. Phys. JAPLD8 0021-4922 10.1143/JJAP.39.L79 39, L79 (2000).
- (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 79
- Watanabe, K.¹ Koguchi, N.² Gotoh, Y.³

7
- 20144389395
- 1530-6984 10.1021/nl048192+
- T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai, T. Tateno, J. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, Nano Lett. 1530-6984 10.1021/nl048192+ 5, 425 (2005).
- (2005) Nano Lett. , vol.5 , pp. 425
- Mano, T.¹ Kuroda, T.² Sanguinetti, S.³ Ochiai, T.⁴ Tateno, T.⁵ Kim, J.⁶ Noda, T.⁷ Kawabe, M.⁸ Sakoda, K.⁹ Kido, G.¹⁰

8
- 72849110897
- NALEFD 1530-6984 10.1021/nl901493f
- C. Somaschini, S. Bietti, N. Koguchi, and S. Sanguinetti, Nano Lett. NALEFD 1530-6984 10.1021/nl901493f 9, 3419 (2009).
- (2009) Nano Lett. , vol.9 , pp. 3419
- Somaschini, C.¹ Bietti, S.² Koguchi, N.³ Sanguinetti, S.⁴

9
- 84857990238
- CGDEFU 1528-7483 10.1021/cg201153d
- C. Somaschini, S. Bietti, A. Scaccabarozzi, E. Grilli, and S. Sanguinetti, Cryst. Growth Des. CGDEFU 1528-7483 10.1021/cg201153d 12, 1180 (2012).
- (2012) Cryst. Growth Des. , vol.12 , pp. 1180
- Somaschini, C.¹ Bietti, S.² Scaccabarozzi, A.³ Grilli, E.⁴ Sanguinetti, S.⁵

10
- 77949361848
- NNOTER 0957-4484 10.1088/0957-4484/21/12/125601
- C. Somaschini, S. Bietti, S. Sanguinetti, N. Koguchi, and A. Fedorov, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/21/12/125601 21, 125601 (2010).
- (2010) Nanotechnology , vol.21 , pp. 125601
- Somaschini, C.¹ Bietti, S.² Sanguinetti, S.³ Koguchi, N.⁴ Fedorov, A.⁵

11
- 79953286341
- NNOTER 0957-4484 10.1088/0957-4484/22/18/185602
- C. Somaschini, S. Bietti, N. Koguchi, and S. Sanguinetti, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/22/18/185602 22, 185602 (2011).
- (2011) Nanotechnology , vol.22 , pp. 185602
- Somaschini, C.¹ Bietti, S.² Koguchi, N.³ Sanguinetti, S.⁴

12
- 0000143169
- PRBMDO 1098-0121 10.1103/PhysRevB.46.6815
- T. Shitara, D. D. Vvedensky, M. R. Wilby, J. Zhang, J. H. Neave, and B. A. Joyce, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.46.6815 46, 6815 (1992).
- (1992) Phys. Rev. B , vol.46 , pp. 6815
- Shitara, T.¹ Vvedensky, D.D.² Wilby, M.R.³ Zhang, J.⁴ Neave, J.H.⁵ Joyce, B.A.⁶

13
- 0033351352
- Role of As during homoepitaxial growth on GaAs(001) studied using Monte Carlo simulation
- DOI 10.1016/S0039-6028(99)00565-8
- T. Kawamura and A. Ishii, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(99)00565-8 438, 155 (1999). (Pubitemid 30543304)
- (1999) Surface Science , vol.438 , Issue.1-3 , pp. 155-161
- Kawamura, T.¹ Ishii, A.²

14
- 0035501442
- Monte Carlo simulation of recovery process after MBE growth on GaAs(1 0 0)
- DOI 10.1016/S0039-6028(01)01251-1, PII S0039602801012511
- T. Kawamura and A. Ishii, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(01)01251-1 493, 438 (2001). (Pubitemid 32944425)
- (2001) Surface Science , vol.493 , Issue.1-3 , pp. 438-446
- Kawamura, T.¹ Ishii, A.²

15
- 0033359745
- Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces
- DOI 10.1016/S0039-6028(99)00608-1
- A. Ishii and T. Kawamura, Sur. Sci. SUSCAS 0039-6028 10.1016/S0039- 6028(99)00608-1 436, 38 (1999). (Pubitemid 30500611)
- (1999) Surface Science , vol.436 , Issue.1 , pp. 38-50
- Ishii, A.¹ Kawamura, T.²

16
- 78649281139
- APPLAB 0003-6951 10.1063/1.3511283
- C. Somaschini, S. Bietti, N. Koguchi, and S. Sanguinetti, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3511283 97, 203109 (2010).
- (2010) Appl. Phys. Lett. , vol.97 , pp. 203109
- Somaschini, C.¹ Bietti, S.² Koguchi, N.³ Sanguinetti, S.⁴

17
- 78649753685
- 1931-7573 10.1007/s11671-010-9699-6
- C. Somaschini, S. Bietti, A. Fedorov, N. Koguchi, and S. Sanguinetti, Nanoscale Res. Lett. 1931-7573 10.1007/s11671-010-9699-6 5, 1865 (2010).
- (2010) Nanoscale Res. Lett. , vol.5 , pp. 1865
- Somaschini, C.¹ Bietti, S.² Fedorov, A.³ Koguchi, N.⁴ Sanguinetti, S.⁵

18
- 33845766264
- PRBMDO 1098-0121 10.1103/PhysRevB.74.245328
- A. Chakrabarti, P. Kratzer, and M. Scheffler, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.74.245328 74, 245328 (2006).
- (2006) Phys. Rev. B , vol.74 , pp. 245328
- Chakrabarti, A.¹ Kratzer, P.² Scheffler, M.³

19
- 21544433483
- APPLAB 0003-6951 10.1063/1.111004
- C. Orme, M. D. Johnson, J. L. Sudijono, K. T. Leung, and B. G. Orr, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111004 64, 860 (1994).
- (1994) Appl. Phys. Lett. , vol.64 , pp. 860
- Orme, C.¹ Johnson, M.D.² Sudijono, J.L.³ Leung, K.T.⁴ Orr, B.G.⁵

20
- 84876186807
- CRTEDF 0232-1300 10.1002/crat.2170191112
- V. Gorokhov, T. Dedegkaev, Y. Ilyin, V. Moshnikov, A. Petrov, Y. Sosov, and D. Yaskov, Cryst. Res. Technol. CRTEDF 0232-1300 10.1002/crat.2170191112 19, 1465 (1984).
- (1984) Cryst. Res. Technol. , vol.19 , pp. 1465
- Gorokhov, V.¹ Dedegkaev, T.² Ilyin, Y.³ Moshnikov, V.⁴ Petrov, A.⁵ Sosov, Y.⁶ Yaskov, D.⁷

21
- 84876176232
- (unpublished).
- K. Reyes (unpublished).
- Reyes, K.¹

22
- 37749019024
- in edited by A. Voigt (Birkhauser, Berlin
- M. Biehl, in Multiscale Modeling in Epitaxial Growth, Vol. 149 of International Series of Numerical Mathematics, edited by, A. Voigt, (Birkhauser, Berlin, 2005), pp. 3-18.
- (2005) Multiscale Modeling in Epitaxial Growth , pp. 3-18
- Biehl, M.¹

23
- 0001096113
- PLEEE8 1539-3755 10.1103/PhysRevE.51.R867
- J. L. Blue, I. Beichl, and F. Sullivan, Phys. Rev. E PLEEE8 1539-3755 10.1103/PhysRevE.51.R867 51, R867 (1995).
- (1995) Phys. Rev. e , vol.51 , pp. 867
- Blue, J.L.¹ Beichl, I.² Sullivan, F.³

24
- 46549086588
- SSREDI 0167-5729 10.1016/j.surfrep.2008.03.001
- A. Ohtake, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/j.surfrep.2008.03.001 63, 295 (2008).
- (2008) Surf. Sci. Rep. , vol.63 , pp. 295
- Ohtake, A.¹

25
- 0026899562
- RHEED intensity effects during the growth of InAs, InSb and In(As,Sb) by molecular beam epitaxy
- DOI 10.1016/0022-0248(92)90137-8
- I. Ferguson, A. de Oliveira, and B. Joyce, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(92)90137-8 121, 267 (1992). (Pubitemid 23560890)
- (1992) Journal of Crystal Growth , vol.121 , Issue.3 , pp. 267-277
- Ferguson, I.T.¹ De Oliveira, A.G.² Joyce, B.A.³

26
- 0027560080
- JCRGAE 0022-0248 10.1016/0022-0248(93)90382-7
- B. Liang and C. Tu, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(93)90382-7 128, 538 (1993).
- (1993) J. Cryst. Growth , vol.128 , pp. 538
- Liang, B.¹ Tu, C.²

27
- 36448999448
- JAPIAU 0021-8979 10.1063/1.351209
- H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351209 71, 1753 (1992).
- (1992) J. Appl. Phys. , vol.71 , pp. 1753
- Yamaguchi, H.¹ Horikoshi, Y.²

28
- 33947317755
- Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)
- DOI 10.1063/1.2713745
- Z. M. Wang, B. L. Liang, K. A. Sablon, and G. J. Salamo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2713745 90, 113120 (2007). (Pubitemid 46439842)
- (2007) Applied Physics Letters , vol.90 , Issue.11 , pp. 113120
- Wang, Zh.M.¹ Liang, B.L.² Sablon, K.A.³ Salamo, G.J.⁴

29
- 29744461400
- Optical transitions in quantum ring complexes
- DOI 10.1103/PhysRevB.72.205301, 205301
- T. Kuroda, T. Mano, T. Ochiai, S. Sanguinetti, K. Sakoda, G. Kido, and N. Koguchi, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.205301 72, 205301 (2005). (Pubitemid 43029440)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.72 , Issue.20 , pp. 1-8
- Kuroda, T.¹ Mano, T.² Ochiai, T.³ Sanguinetti, S.⁴ Sakoda, K.⁵ Kido, G.⁶ Koguchi, N.⁷

30
- 0035398765
- Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy
- DOI 10.1016/S0022-0248(01)00991-5, PII S0022024801009915
- K. Watanabe, S. Tsukamoto, Y. Gotoh, and N. Koguchi, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(01)00991-5 227, 1073 (2001). (Pubitemid 32616992)
- (2001) Journal of Crystal Growth , vol.227-228 , pp. 1073-1077
- Watanabe, K.¹ Tsukamoto, S.² Gotoh, Y.³ Koguchi, N.⁴

31
- 0038592878
- PRBMDO 1098-0121 10.1103/PhysRevB.66.121302
- T. Kuroda, S. Sanguinetti, M. Gurioli, K. Watanabe, F. Minami, and N. Koguchi, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.66.121302 66, 121302 (2002).
- (2002) Phys. Rev. B , vol.66 , pp. 121302
- Kuroda, T.¹ Sanguinetti, S.² Gurioli, M.³ Watanabe, K.⁴ Minami, F.⁵ Koguchi, N.⁶

32
- 79955996661
- Role of the wetting layer in the carrier relaxation in quantum dots
- DOI 10.1063/1.1495525
- S. Sanguinetti, K. Watanabe, T. Tateno, M. Wakaki, N. Koguchi, T. Kuroda, F. Minami, and M. Gurioli, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1495525 81, 613 (2002). (Pubitemid 34923968)
- (2002) Applied Physics Letters , vol.81 , Issue.4 , pp. 613
- Sanguinetti, S.¹ Watanabe, K.² Tateno, T.³ Wakaki, M.⁴ Koguchi, N.⁵ Kuroda, T.⁶ Minami, F.⁷ Gurioli, M.⁸

33
- 79957974378
- JCRGAE 0022-0248 10.1016/j.jcrysgro.2010.10.141
- C. Heyn, A. Stemmann, M. Klingbeil, C. Strelow, T. Köppen, S. Mendach, and W. Hansen, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro. 2010.10.141 323, 263 (2011).
- (2011) J. Cryst. Growth , vol.323 , pp. 263
- Heyn, C.¹ Stemmann, A.² Klingbeil, M.³ Strelow, C.⁴ Köppen, T.⁵ Mendach, S.⁶ Hansen, W.⁷

34
- 79957984328
- JCRGAE 0022-0248 10.1016/j.jcrysgro.2010.10.131
- C. Somaschini, S. Bietti, A. Fedorov, N. Koguchi, and S. Sanguinetti, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2010.10.131 323, 279 (2011).
- (2011) J. Cryst. Growth , vol.323 , pp. 279
- Somaschini, C.¹ Bietti, S.² Fedorov, A.³ Koguchi, N.⁴ Sanguinetti, S.⁵

35
- 70349094891
- NNOTER 0957-4484 10.1088/0957-4484/20/39/395601
- T. Mano, M. Abbarchi, T. Kuroda, C. A. Mastrandrea, A. Vinattieri, S. Sanguinetti, K. Sakoda, and M. Gurioli, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/39/395601 20, 395601 (2009).
- (2009) Nanotechnology , vol.20 , pp. 395601
- Mano, T.¹ Abbarchi, M.² Kuroda, T.³ Mastrandrea, C.A.⁴ Vinattieri, A.⁵ Sanguinetti, S.⁶ Sakoda, K.⁷ Gurioli, M.⁸

36
- 84862152777
- APPLAB 0003-6951 10.1063/1.4726189
- L. Cavigli, S. Bietti, N. Accanto, S. Minari, M. Abbarchi, G. Isella, C. Frigeri, A. Vinattieri, M. Gurioli, and S. Sanguinetti, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.4726189 100, 231112 (2012).
- (2012) Appl. Phys. Lett. , vol.100 , pp. 231112
- Cavigli, L.¹ Bietti, S.² Accanto, N.³ Minari, S.⁴ Abbarchi, M.⁵ Isella, G.⁶ Frigeri, C.⁷ Vinattieri, A.⁸ Gurioli, M.⁹ Sanguinetti, S.¹⁰

37
- 0026413126
- Real-time μ-RHEED observations of GaAs surfaces during growth with alternating source supply
- DOI 10.1016/0022-0248(91)90973-9
- T. Isu, M. Hata, and A. Watanabe, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(91)90973-9 111, 210 (1991). (Pubitemid 21665004)
- (1991) Journal of Crystal Growth , vol.111 , Issue.1-4 , pp. 210-215
- Isu Toshiro¹ Hata Masayuki² Watanabe Akiyoshi³

38
- 0001121365
- PRBMDO 1098-0121 10.1103/PhysRevB.41.5500
- G. S. Bales and A. Zangwill, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.41.5500 41, 5500 (1990).
- (1990) Phys. Rev. B , vol.41 , pp. 5500
- Bales, G.S.¹ Zangwill, A.²

39
- 0002069819
- in edited by C. Godréche (Cambridge University Press, Cambridge, UK
- B. Caroli, C. Caroli, and B. Roulet, in Solids Far from Equilibrium, edited by, C. Godréche, (Cambridge University Press, Cambridge, UK, 1992), pp. 155-296.
- (1992) Solids Far from Equilibrium , pp. 155-296
- Caroli, B.¹ Caroli, C.² Roulet, B.³

40
- 2342635143
- PRBMDO 1098-0121 10.1103/PhysRevB.69.121406
- G. Russo, L. M. Sander, and P. Smereka, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.69.121406 69, 121406 (2004).
- (2004) Phys. Rev. B , vol.69 , pp. 121406
- Russo, G.¹ Sander, L.M.² Smereka, P.³

41
- 4243632346
- PRLTAO 0031-9007 10.1103/PhysRevLett.47.1400
- T. A. Witten and L. M. Sander, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.47.1400 47, 1400 (1981).
- (1981) Phys. Rev. Lett. , vol.47 , pp. 1400
- Witten, T.A.¹ Sander, L.M.²

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