Role of the wetting layer in the carrier relaxation in quantum dots

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 613-615

  Sanguinetti, S ^a   Watanabe, K ^a   Tateno, T ^a   Wakaki, M ^a   Koguchi, N ^a   Kuroda, T ^b   Minami, F ^b   Gurioli, M ^c,d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c INFM   (Italy)

^d UNIVERSITY OF FLORENCE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER PROCESS; CARRIER RELAXATION; CARRIER RELAXATION TIME; DOT GROUND STATE; DROPLET EPITAXY; GAAS/ALGAAS; PHOTOGENERATED CARRIERS; PICOSECOND TIME; QUANTUM DOT STRUCTURE; WETTING LAYER; ZERO-DIMENSIONAL;

WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955996661     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495525     Document Type: Article

References (21)

1. H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, Phys. Rev. B 44, 10945 (1991). prb PRBMDO 0163-1829
2. A. L. Efros, V. A. Kharchenko, and M. Rosen, Solid State Commun. 93, 281 (1995). ssc SSCOA4 0038-1098
3. D. F. Schroeter, D. J. Griffiths, and P. C. Sercel, Phys. Rev. B 54, 1486 (1996). prb PRBMDO 0163-1829
4. Y. Yoda, O. Moriwaki, M. Nishioka, and Y. Arakawa, Phys. Rev. Lett. 82, 4114 (1999). prl PRLTAO 0031-9007
5. R. Ferreira and G. Bastard, Appl. Phys. Lett. 74, 2818 (1999). apl APPLAB 0003-6951
6. R. Heitz, M. Veit, N. N. Ledentsov, A. Hoffmann, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Z. I. Alferov, Phys. Rev. B 56, 10435 (1997). prb PRBMDO 0163-1829
7. B. Ohnesorge, M. Albrecht, J. Oshinowo, and A. Forchel, Phys. Rev. B 54, 11532 (1996). prb PRBMDO 0163-1829
8. D. Morris, N. Perret, and S. Fafard, Appl. Phys. Lett. 75, 3593 (1999). apl APPLAB 0003-6951
9. U. Bockelmann and T. Egeler, Phys. Rev. B 46, 15574 (1992). prb PRBMDO 0163-1829
10. A. V. Uskov, F. Adler, H. Schweizer, and M. H. Pilkuhn, J. Appl. Phys. 81, 7895 (1997). jap JAPIAU 0021-8979
11. N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth 111, 688 (1991). jcr JCRGAE 0022-0248
12. K. Watanabe, N. Koguchi, and Y. Gotoh, Jpn. J. Appl. Phys., Part 2 39, L79 (2000). jjc JAPLD8 0021-4922
13. K. Watanabe, S. Tsukamoto, Y. Gotoh, and N. Koguchi, J. Cryst. Growth 227, 1073 (2001). jcr JCRGAE 0022-0248
14. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 27, 169 (1988). jjb JAPNDE 0021-4922
15. T. Tateno, K. Watanabe, S. Sanguinetti, S. Tsukamoto, M. Wakaki, Y. Gotoh, and N. Koguchi, in Growth of Well Defined Nanostructures, edited by N. Koguchi (National Research Institute for Metals, Tsukuba, Japan, 2001), p. 298.
16. S. Sanguinetti, K. Watanabe, T. Kuroda, F. Minami, Y. Gotoh, and N. Koguchi, J. Cryst. Growth (to be published).
17. rep is the laser repetition rate.
18. O. Verzelen, R. Ferreira, and G. Bastard, Phys. Rev. B 62, 4809 (2000). prb PRBMDO 0163-1829
19. S. Raymond, K. Hinzer, S. Fafard, and J. L. Merz, Phys. Rev. B 61, 16331 (2000). prb PRBMDO 0163-1829
20. J. L. Pan, Phys. Rev. B 49, 11272 (1994). prb PRBMDO 0163-1829
21. V. I. Klimov, D. W. McBranch, C. A. Leatherdale, and M. G. Bawendi, Phys. Rev. B 60, 13740 (1999). prb PRBMDO 0163-1829