Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1073-1077

  Watanabe, Katsuyuki ^a,b   Tsukamoto, Shiro ^a   Gotoh, Yoshihiko ^b   Koguchi, Nobuyuki ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Annealing; A1. Low dimensional structures; A1. Photoluminescence; A1. Quantum dots; A3. Molecular beam epitaxy; B1. Gallium compounds

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CRYSTALLINITY; DROPLET EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398765     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00991-5     Document Type: Conference Paper

References (15)