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Volumn 5, Issue 12, 2010, Pages 1865-1867

Erratum to Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy (Nanoscale Res Lett, 10.1007/s11671-010-9699-6);Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

(5) Somaschini, C a Bietti, S a Fedorov, A a Koguchi, N a Sanguinetti, S a

a L NESS and Dipartimento di Scienza dei Materiali (Italy)

Author keywords

Droplet epitaxy; GaAs AlGaAs; Molecular beam epitaxy; Quantum rings

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CRYSTALLOGRAPHY; DROPS; FABRICATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

CRYSTALLOGRAPHIC DIRECTIONS; DROPLET EPITAXY; EXPERIMENTAL PROCEDURE; GAAS/ALGAAS; MIGRATION PROCESS; MORPHOLOGICAL ANISOTROPY; QUANTUM RING; SUBSTRATE TEMPERATURE;

SUBSTRATES;

EID: 78649753685 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-010-9816-6 Document Type: Erratum

Times cited : (26)

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