High temperature single photon emitter monolithically integrated on silicon

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Cavigli, L ^a   Bietti, S ^b   Accanto, N ^a   Minari, S ^a   Abbarchi, M ^a   Isella, G ^c   Frigeri, C ^d   Vinattieri, A ^a   Gurioli, M ^a   Sanguinetti, S ^b  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c POLITECNICO DI MILANO   (Italy)

^d IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON LINES; GAAS; HIGH TEMPERATURE; LIQUID NITROGEN TEMPERATURE; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; SI SUBSTRATES; SI-BASED MICROELECTRONICS; SINGLE PHOTON EMISSION; SINGLE PHOTON EMITTERS; SINGLE-PHOTON PULSE;

MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS;

SILICON;

EID: 84862152777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4726189     Document Type: Article

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