Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 279-281

  Somaschini, C ^a   Bietti, S ^a   Fedorov, A ^b   Koguchi, N ^a   Sanguinetti, S ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Nanostructures; Reflection high energy electron diffraction; Semiconducting IIIV materials

Indexed keywords

DROPLET EPITAXY; EXPERIMENTAL DATA; FUNDAMENTAL PARAMETERS; GAAS; HIGHER TEMPERATURES; LAYER-BY-LAYER GROWTH; QUANTUM RING; SEMI CONDUCTING III-V MATERIALS;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; SEMICONDUCTING GALLIUM;

NANOSTRUCTURES;

EID: 79957984328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.131     Document Type: Article

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