Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 12, 2002, Pages 1213021-1213024

  Kuroda, T ^a   Sanguinetti, S ^b,c   Gurioli, M ^b   Watanabe, K ^c   Minami, F ^a   Koguchi, N ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; GALLIUM ARSENIDE;

ARTICLE; CALCULATION; MATERIALS; MATERIALS TESTING; PHYSICS; QUANTUM CHEMISTRY;

EID: 0038592878     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.121302     Document Type: Article

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