Monte Carlo simulation of recovery process after MBE growth on GaAs(1 0 0)

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 438-446

  Kawamura, T ^a   Ishii, A ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

Author keywords

Gallium arsenide; Monte Carlo simulations; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; DIFFUSION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SURFACE ROUGHNESS;

SURFACE DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035501442     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01251-1     Document Type: Conference Paper

References (11)