Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 4, 2013, Pages 732-736

  Frascaroli, J ^a   Seguini, G ^a   Cianci, E ^a   Saynova, D ^b   Van Roosmalen, J ^b   Perego, M ^a  

^a LABORATORIO MDM   (Italy)

^b TNO   (Netherlands)

Author keywords

Al2O3; interface states; oxide charge; silicon surface passivation; thermal ALD

Indexed keywords

CONDUCTANCE-VOLTAGE MEASUREMENTS; CRYSTALLINE SILICON SUBSTRATES; DENSITY OF INTERFACE STATE; ELECTRICAL CHARACTERIZATION; OXIDE CHARGE; SILICON SURFACES; SURFACE PASSIVATION EFFECTS; THERMAL ALD;

ALUMINUM; ATOMIC LAYER DEPOSITION; DEPOSITION; INTERFACE STATES; MOS CAPACITORS; SILICON OXIDES; TEMPERATURE;

INTERFACES (MATERIALS);

EID: 84875852671     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200568     Document Type: Article

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