Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires

Nano Letters

Volumn 13, Issue 4, 2013, Pages 1522-1527

  Rudolph, Daniel ^a   Funk, Stefan ^a,b   Döblinger, Markus ^c   Morkötter, Stefanie ^a   Hertenberger, Simon ^a   Schweickert, Lucas ^a   Becker, Jonathan ^a   Matich, Sonja ^a   Bichler, Max ^a   Spirkoska, Dancîe ^a   Zardo, Ilaria ^a,b   Finley, Jonathan J ^a   Abstreiter, Gerhard ^a,b   Koblmüller, Gregor ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

Author keywords

AlGaAs; composition; Core shell nanowires; GaAs; molecular beam epitaxy; segregation

Indexed keywords

ALGAAS; COMPOSITIONAL HOMOGENEITY; CORE-SHELL NANOWIRES; CROSS-SECTIONAL SCANNING; GAAS; INTERFACE SEGREGATION; MICRO RAMAN MEASUREMENTS; SURFACE RECOMBINATIONS;

ALLOYING; ALUMINUM; ALUMINUM GALLIUM ARSENIDE; CHEMICAL ANALYSIS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

SHELLS (STRUCTURES);

ALLOY; GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; NANOWIRE; ORGANOARSENIC DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; LUMINESCENCE; PARTICLE SIZE; SURFACE PROPERTY;

ALLOYS; ARSENICALS; CRYSTALLIZATION; GALLIUM; LUMINESCENCE; NANOSTRUCTURES; NANOWIRES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 84876037590     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3046816     Document Type: Article

References (49)

1. Lauhon, L. J.; Gudiksen, M. S.; Wang, D.; Lieber, C. M. Nature 2002, 420, 57-61
2. Qian, F.; Li, Y.; Gradecak, S.; Park, H.-G.; Dong, Y.; Ding, Y.; Wang, Z. L.; Lieber, C. M. Nat. Mater. 2008, 7, 701-6
3. Tomioka, K.; Tanaka, T.; Hara, S.; Hiruma, K.; Fukui, T. IEEE J. Sel. Top. Quantum Electronics 2011, 17, 1112-1129
4. Titova, L. V.; Hoang, T. B.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Kim, Y.; Joyce, H. J.; Tan, H. H.; Jagadish, C. Appl. Phys. Lett. 2006, 89, 173126
5. Xiang, J.; Lu, W.; Hu, Y.; Wu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489-93
6. Li, Y.; Xiang, J.; Qian, F.; Gradecak, S.; Wu, Y.; Yan, H.; Blom, D. a; Lieber, C. M. Nano Lett. 2006, 6, 1468-73
7. Spirkoska, D.; Fontcuberta i Morral, A.; Dufouleur, J.; Xie, Q.; Abstreiter, G. Phys. Status Solidi RRL 2011, 5, 353-355
8. Tomioka, K.; Yoshimura, M.; Fukui, T. Nature 2012, 488, 189-92
9. Spicer, W. E. J. Vac. Sci. Technol. 1980, 17, 1019
10. Wolford, D.; Gilliland, G.; Kuech, T. J. Vac. Sci. Technol., B 1991, 9, 2369-2376
11. Noborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T. Appl. Phys. Lett. 2005, 87, 093109
12. Joyce, H.; Kim, Y.; Gao, Q.; Tan, H. H.; Jagadish, C. In 2006 International Conference on Nanoscience and Nanotechnology; IEEE, July 3-6, 2006; Brisbane, Australia; DOI: 10.1109/ICONN.2006.340640.
13. Samuelson, L. Phys. E 2004, 25, 313-318
14. Tambe, M. J.; Lim, S. K.; Smith, M. J.; Allard, L. F.; Gradečak, S. Appl. Phys. Lett. 2008, 93, 151917
15. Chang, C.-C.; Chi, C.-Y.; Yao, M.; Huang, N.; Chen, C.-C.; Theiss, J.; Bushmaker, A. W.; Lalumondiere, S.; Yeh, T.-W.; Povinelli, M. L.; Zhou, C.; Dapkus, P. D.; Cronin, S. B. Nano Lett. 2012, 12, 4484-9
16. Fontcuberta i Morral, A.; Spirkoska, D.; Arbiol, J.; Heigoldt, M.; Ramon Morante, J.; Abstreiter, G. Small 2008, 4, 899-903
17. Zhou, H. L.; Hoang, T. B.; Dheeraj, D. L.; Van Helvoort, a T. J.; Liu, L.; Harmand, J. C.; Fimland, B. O.; Weman, H. Nanotechnology 2009, 20, 415701
18. Paek, J. H.; Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. Phys. E 2010, 42, 2722-2726 and references therein
19. Breuer, S.; Pfüller, C.; Flissikowski, T.; Brandt, O.; Grahn, H. T.; Geelhaar, L.; Riechert, H. Nano Lett. 2011, 0-3
20. Demichel, O.; Heiss, M.; Bleuse, J.; Mariette, H.; Fontcuberta i Morral, a. Appl. Phys. Lett. 2010, 97, 201907
21. Heigoldt, M.; Arbiol, J.; Spirkoska, D.; Rebled, J. M.; Conesa-Boj, S.; Abstreiter, G.; Peiró, F.; Morante, J. R.; Fontcuberta i Morral, A. J. Mater. Chem. 2009, 19, 840
22. Bourgoin, J. C. Solid State Phenomena 1991, 10 and references therein
23. Colombo, C.; Spirkoska, D.; Frimmer, M.; Abstreiter, G.; Fontcuberta i Morral, a. Phys. Rev. B 2008, 77, 2-6
24. Rudolph, D.; Hertenberger, S.; Bolte, S.; Paosangthong, W.; Spirkoska, D.; Döblinger, M.; Bichler, M.; Finley, J. J.; Abstreiter, G.; Koblmüller, G. Nano Lett. 2011, 11, 3848-54
25. Lambert, B.; Caulet, J.; Regreny, A.; Baudet, M.; Deveaud, B.; Chomette, A. Semicond. Sci. Technol. 1987, 2, 491-493
26. Bosio, C.; Staehli, J.; Guzzi, M.; Burri, G.; Logan, R. Phys. Rev. B 1988, 38, 3263-3268
27. Cordona, M. Light Scattering in Solids II; Cardona, M.; Güntherodt, G., Eds.; Springer: Berlin, 1982; Vol. 50, pp 19-178, and references therein.
28. Abstreiter, G.; Bauser, E.; Fischer, A.; Ploog, K. Appl. Phys. 1978, 16, 345-352 and references therein
29. Lockwood, D. J.; Radomski, R.; Wasilewski, Z. J. Raman Spectrosc. 2002, 33, 202-206
30. Parayanthal, P.; Pollak, F. Phys. Rev. Lett. 1984, 52, 1822-1825
31. Brodsky, M. H. In Light Scattering in Solids I; Cardona, M., Ed.; Springer: Berlin, 1982; pp 205-251 and references therein.
32. Algra, R. E.; Hocevar, M.; Verheijen, M. a; Zardo, I.; Immink, G. G. W.; Van Enckevort, W. J. P.; Abstreiter, G.; Kouwenhoven, L. P.; Vlieg, E.; Bakkers, E. P. a M. Nano Lett. 2011, 11, 1690-4
33. Hertenberger, S.; Rudolph, D.; Bichler, M.; Finley, J. J.; Abstreiter, G.; Koblmüller, G. J. Appl. Phys. 2010, 108, 114316
34. Landgren, G. J. Vac. Sci. Technol., B 1984, 2, 351
35. Koshiba, S.; Noda, T.; Noge, H.; Nakamura, Y.; Ichinose, H.; Shitara, T.; Vvedensky, D. D.; Sakaki, H. J. Cryst. Growth 1995, 150, 322-326
36. Biasiol, G.; Gustafsson, a.; Leifer, K.; Kapon, E. Phys. Rev. B 2002, 65, 1-15 and references therein
37. Sköld, N.; Wagner, J. B.; Karlsson, G.; Hernán, T.; Seifert, W.; Pistol, M.-E.; Samuelson, L. Nano Lett. 2006, 6, 2743-7
38. Wagner, J. B.; Sköld, N.; Reine Wallenberg, L.; Samuelson, L. J. Cryst. Growth 2010, 312, 1755-1760
39. Kley, A.; Ruggerone, P.; Scheffler, M. Phys. Rev. Lett. 1997, 79, 5278-5281
40. Tsao, J. Y. Materials Fundamentals of Molecular Beam Epitaxy; Academic Press: Boston, 1992.
41. Steinke, L.; Cantwell, P.; Zakharov, D.; Stach, E.; Zaluzec, N. J.; Fontcuberta i Morral, a.; Bichler, M.; Abstreiter, G.; Grayson, M. Appl. Phys. Lett. 2008, 93, 193117
42. Mooney, P. M. J. Appl. Phys. 1990, 67, R1
43. Ishibashi, T.; Tarucha, S.; Okamoto, H. Jpn. J. Appl. Phys. 1982, 21, L476-L478
44. Pavesi, L.; Guzzi, M. J. Appl. Phys. 1994, 75, 4779 and references therein
45. Kajikawa, Y.; Nakanishi, M.; Nagahama, K. Semicond. Sci. Technol. 1992, 7, 1170-1177
46. Ford, W.; Myles, C. Phys. Rev. B 1988, 38, 1210-1214
47. Oh-hori, T.; Itoh, H.; Tanaka, H.; Kasai, K.; Takikawa, M.; Komeno, J. J. Appl. Phys. 1987, 61, 4603
48. Petroff, P.; Cho, A.; Reinhart, F.; Gossard, A.; Wiegmann, W. Phys. Rev. Lett. 1982, 48, 170-173 and references therein
49. Olmsted, B. L.; Houde-Walter, S. N. Appl. Phys. Lett. 1992, 60, 368 and references therein