Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

Chinese Physics B

Volumn 19, Issue 5, 2010, Pages 0578021-0578024

  Zhoa, De Gang ^a   Zhang, Shuang ^a   Liu, Wen Bao ^a   Hao, Xiao Peng ^b   Jiang, De Sheng ^a   Zhu, Jian Jun ^a   Liu, Zong Shun ^a   Wang, Hui ^a   Zhang, Shu Ming ^a   Yang, Hui ^a   Wei, Long ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NATIONAL INSTITUTE OF METROLOGY   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Ga vacancies; GaN; MOCVD; Schottky barrier photodetector

Indexed keywords

ACTIVE LAYER; DISLOCATION DENSITIES; MOCVD; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER PHOTODETECTOR; SCHOTTKY BARRIERS; ULTRA-VIOLET PHOTODETECTORS;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES;

GALLIUM ALLOYS;

EID: 77952837950     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/5/057802     Document Type: Article

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