SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages

(7) Tseng, Chi Che a Chung, Tung Hsun a Mai, Shu Cheng a Chao, Kuang Ping a Lin, Wei Hsun a Lin, Shih Yen b,c,d Wu, Meng Chyi a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INFRARED DETECTORS; LATTICE MISMATCH; NANOCRYSTALS; PHOTONS; QUANTUM WELL INFRARED PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

ENERGY SEPARATIONS; HEAVY HOLES; HOLE STATE; INAS-GAAS QUANTUM DOTS; PHOTOLUMINESCENCE EXCITATION SPECTRUM; QUANTUM DOTS INFRARED PHOTODETECTORS; SPECTRAL RESPONSE; SPECTRUM RESPONSE; TRANSITION MECHANISM; WETTING LAYER;

INDIUM ARSENIDE;

EID: 77952993278 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3368607 Document Type: Conference Paper

Times cited : (3)

References (12)

1
- 70349656737
- IPTLEL 1041-1135. 10.1109/LPT.2008.926020
- C. C. Tseng, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 20, 1240 (2008). 10.1109/LPT.2008.926020
- (2008) IEEE Photonics Technol. Lett. , vol.20 , pp. 1240
- Tseng, C.C.¹

2
- 33646389600
- APPLAB 0003-6951. 10.1063/1.2199589
- S. T. Chou, M. C. Wu, S. Y. Lin, and J. Y. Chi, Appl. Phys. Lett. APPLAB 0003-6951 88, 173511 (2006). 10.1063/1.2199589
- (2006) Appl. Phys. Lett. , vol.88 , pp. 173511
- Chou, S.T.¹ Wu, M.C.² Lin, S.Y.³ Chi, J.Y.⁴

3
- 0003978311
- (Wiley, Chichester)
- D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
- (1999) Quantum Dot Heterostructures
- Bimberg, D.¹ Grundmann, M.² Ledentsov, N.N.³

4
- 34548180277
- Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels
- DOI 10.1103/PhysRevLett.99.086803
- D. M. T. Kuo and Y. C. Chang, Phys. Rev. Lett. PRLTAO 0031-9007 99, 086803 (2007). 10.1103/PhysRevLett.99.086803 (Pubitemid 47311610)
- (2007) Physical Review Letters , vol.99 , Issue.8 , pp. 086803
- Kuo, D.M.-T.¹ Chang, Y.-C.²

5
- 33845729941
- Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer
- DOI 10.1063/1.2405872
- W. S. Liu, D. M. T. Kuo, J. I. Chyi, W. Y. Chen, H. S. Chang, and T. M. Hsu, Appl. Phys. Lett. APPLAB 0003-6951 89, 243103 (2006). 10.1063/1.2405872 (Pubitemid 44974960)
- (2006) Applied Physics Letters , vol.89 , Issue.24 , pp. 243103
- Liu, W.-S.¹ Kuo, D.M.T.² Chyi, J.-I.³ Chen, W.-Y.⁴ Chang, H.-S.⁵ Hsu, T.-M.⁶

6
- 0035938375
- APPLAB 0003-6951. 10.1063/1.1362201
- S. F. Tang, S. Y. Lin, and S. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 78, 2428 (2001). 10.1063/1.1362201
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2428
- Tang, S.F.¹ Lin, S.Y.² Lee, S.C.³

7
- 0000447663
- APPLAB 0003-6951
- H. C. Lin, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, Appl. Phys. Lett. APPLAB 0003-6951 78, 79 (2001).
- (2001) Appl. Phys. Lett. , vol.78 , pp. 79
- Lin, H.C.¹ Gao, M.² McCaffrey, J.³ Wasilewski, Z.R.⁴ Fafard, S.⁵

8
- 27744479451
- Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors
- DOI 10.1116/1.2008271
- C. Y. Huang, T. M. Ou, S. T. Chou, C. S. Tsai, M. C. Wu, S. Y. Lin, and J. Y. Chi, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 1909 (2005). 10.1116/1.2008271 (Pubitemid 43127152)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.5 , pp. 1909-1912
- Huang, C.-Y.¹ Ou, T.-M.² Chou, S.-T.³ Tsai, C.-S.⁴ Wu, M.-C.⁵ Lin, S.-Y.⁶ Chi, J.-Y.⁷

9
- 33845218869
- 1-xAs/GaAs quantum dot system for a broad indium content range of 0.3-1
- DOI 10.1063/1.2364604
- G. Sk, P. Poloczek, K. Ryczko, J. Misiewicz, A. Löffler, J. P. Reithmaier, and A. Forchel, J. Appl. Phys. JAPIAU 0021-8979 100, 103529 (2006). 10.1063/1.2364604 (Pubitemid 44853674)
- (2006) Journal of Applied Physics , vol.100 , Issue.10 , pp. 103529
- Sek, G.¹ Poloczek, P.² Ryczko, K.³ Misiewicz, J.⁴ Loffler, A.⁵ Reithmaier, J.P.⁶ Forchel, A.⁷

10
- 0001428941
- PRBMDO 0163-1829. 10.1103/PhysRevB.60.2592
- A. S. Bhatti, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, Phys. Rev. B PRBMDO 0163-1829 60, 2592 (1999). 10.1103/PhysRevB.60.2592
- (1999) Phys. Rev. B , vol.60 , pp. 2592
- Bhatti, A.S.¹ Grassi Alessi, M.² Capizzi, M.³ Frigeri, P.⁴ Franchi, S.⁵

11
- 46049103000
- APPLAB 0003-6951. 10.1063/1.2953067
- S. T. Chou, C. C. Tseng, C. N. Chen, W. H. Lin, S. Y. Lin, and M. C. Wu, Appl. Phys. Lett. APPLAB 0003-6951 92, 253510 (2008). 10.1063/1.2953067
- (2008) Appl. Phys. Lett. , vol.92 , pp. 253510
- Chou, S.T.¹ Tseng, C.C.² Chen, C.N.³ Lin, W.H.⁴ Lin, S.Y.⁵ Wu, M.C.⁶

12
- 0000556220
- PRBMDO 0163-1829. 10.1103/PhysRevB.56.10435
- R. Heitz, M. Veit, N. N. Ledentsov, A. Hoffmann, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, Phys. Rev. B PRBMDO 0163-1829 56, 10435 (1997). 10.1103/PhysRevB.56.10435
- (1997) Phys. Rev. B , vol.56 , pp. 10435
- Heitz, R.¹ Veit, M.² Ledentsov, N.N.³ Hoffmann, A.⁴ Bimberg, D.⁵ Ustinov, V.M.⁶ Kop'Ev, P.S.⁷ Alferov, Zh.I.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.