Evaluation of a junction termination extension avalanche photodiode for x-ray detection

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2638-2643

  Gramsch, Ernesto ^a   Pchelyakov, Oleg P ^b   Chistokhin, Igor B ^b   Tishkovsky, Eugene G ^b  

^a UNIVERSIDAD DE SANTIAGO DE CHILE   (Chile)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Avalanche photodiode (APD); Gain; Silicon; X rays

Indexed keywords

COMPUTER SIMULATION; DARK CURRENTS; ELECTRIC BREAKDOWN; ION IMPLANTATION; MASKS; SEMICONDUCTING BORON; X RAYS;

DEEP DIFFUSION; JUNCTION TERMINATION EXTENSION;

AVALANCHE PHOTODIODES;

EID: 35148881062     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904829     Document Type: Article

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