RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 185-188

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SILICA; SUBSTRATES;

COULOMB BLOCKADE ENERGY; RANDOM TELEGRAPH SIGNAL (RTS) CAPTURE KINETICS;

MOSFET DEVICES;

EID: 0033190140     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00367-6     Document Type: Article

References (5)

1. M.J.Kirton and M.J.Uren, Adv. Phys., 38 (1989) 367.
2. M. Schulz, J.Appl.Phys., 74 (1993) 2649.
3. H.H.Mueller, D.Wörle and M.Schulz, J.Appl.Phys., 75 (1994) 2970.
4. M.Schulz and H.H.Mueller, in: Festkörperprobleme/Advances in Solid-State Physics, 35, ed. by R.Helbig (Vieweg, Braunschweig/Wiesbaden), pp.229-241.
5. R.R. Siergiej, M.H. White and N.S. Saks, Solid-St.Electron., 35 (1992) 843.