RTS noise due to lateral isolation related defects in submicron nMOSFETs

Microelectronics Reliability

Volumn 38, Issue 10, 1998, Pages 1561-1568

  Lukyanchikova, N ^a   Petrichuk, M ^a   Garbar, N ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342707432     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00034-1     Document Type: Article

References (28)

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