N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis

Microelectronics Reliability

Volumn 47, Issue 1, 2007, Pages 41-45

  Leyris, C ^a,b   Martinez, F ^b   Hoffmann, A ^b   Valenza, M ^b   Vildeuil, J C ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; NATURAL FREQUENCIES; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

NITRIDATION; NOISE ANALYSIS; OXIDE TRAP CHARACTERIZATION;

MOSFET DEVICES;

EID: 33845522039     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.02.010     Document Type: Article

References (16)

1. Martinez F et al. Effect of oxide thickness and nitridation process on PMOS gate and drain low frequency noise. In: 18th International conference on noise and fluctuation proceeding ICNF, 2005. p. 323.
2. Xu J.-P., et al. 1/f noise behaviors of NO-nitrided n-MOSFETs. Solid-State Electron 45 (2001) 431
3. Rold D., et al. Impact of gate oxide nitridation process on 1/f noise in 0.18 μm CMOS. Microelectron Reliab 41 (2001) 1933
4. Morfouli P., et al. Low frequency noise characterization of n and p-MOSFETs with ultrathin oxynitride gate films. Electron Dev Lett 17 8 (1996) 395
5. Kirton M.J., et al. Noise in solid-state microstructures: a new perspective on individual defects, interface states, and low-frequency noise. Adv Phys 38 4 (1989) 367
6. 2 MDD nMOSFETs. Solid-State Electron 44 (2000) 1013
7. McWhorter P.J., et al. Simple technique for separating the effects of interface traps and trapped oxide charge in metal-oxide-semiconductor transistors. Appl Phys Lett 48 2 (1986) 133
8. Roux dit Buisson O., et al. Explaining the amplitude of RTS noise in sub micrometer MOSFET's. Solid-State Electron 35 9 (1992) 1273
9. Simoens E., et al. Model for drain current RTS amplitude in small area MOS transistor. IEEE Trans Electron Dev 39 2 (1992) 422
10. Marin M et al. Low frequency noise studies in body-biased N and P MOSFETs in a 13 μm technology. In: 17th International conference on noise and fluctuation proceeding ICNF, 2003. p. 309.
11. Valenza M., et al. An overview of the impact of downscaling technology on 1/f noise in P MOSFETs to 90 nm. IEE Proc Circ Dev Syst 151 2 (2004) 102
12. Marin M et al. Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization? In: 18th International conference on noise and fluctuation proceeding ICNF, 2005. p. 195.
13. Bidaud M et al. Thermal nitridation of chemical dielectrics as an easy approach to ultra-thin gate oxide processing. In: Proceeding solid state device research conference 2002.
14. Leyris C et al. Trap competition inducing RTS noise in saturation range in N-MOSFETs. In: Proceeding fluctuations and noise FAN, 2005. p. 41.
15. 2 and its interface (1978), S.T Pantelides Pergamon, New York
16. Amarasinghe N., et al. Model for random telegraph signals in sub-micron MOSFETS. Solid-State Electron 47 (2003) 1443