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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 2, 2013, Pages

Graphene-capped InAs/GaAs quantum dots

(5) Ajlani, Hosni a Othmen, Riadh a Oueslati, Meherzi a Cavanna, Antonnella b Madouri, Ali b

a FACULTÉ DES SCIENCES DE TUNIS (Tunisia)

b UNIV PARIS SUD (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON TRANSFER; GAAS SUBSTRATES; GRAPHENE LAYERS; HYBRID STRUCTURE; INAS/GAAS QUANTUM DOTS; PL EMISSION; RADIATIVE EMISSIONS; RAMAN MEASUREMENTS;

GRAPHENE;

EID: 84875760586 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4790365 Document Type: Article

Times cited : (15)

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