The effect of high acceptor dopant concentration of Zn2+ on electrical, optical and structural properties of the In2O3 transparent conducting thin films

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 97-103

  Bagheri Mohagheghi, Mohammad Mehdi ^a   Shokooh Saremi, Mehrdad ^b  

^a DAMGHAN UNIVERSITY   (Iran)

^b SHAHROOD UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSPARENCY; X RAY DIFFRACTION; ZINC;

DOPANTS;

THIN FILMS;

EID: 0037322135     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/306     Document Type: Article

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