Size-shrinkage effect of InAs quantum dots during a GaAs capping growth

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 212-217

  Yamaguchi, Koichi ^a   Saito, Yoshikuni ^a   Ohtsubo, Ryou ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; InAs; Molecular beam epitaxy; Quantum dot; Self organization; Strain; Surface segregation

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SHRINKAGE; STRAIN; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING GROWTH; SIZE-SHRINKAGE EFFECTS; SURFACE SEGREGATION;

SURFACE TREATMENT;

EID: 0037042031     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00864-9     Document Type: Conference Paper

References (11)