Improved charge-trapping characteristics of BaTiO3 by Zr doping for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 34, Issue 4, 2013, Pages 499-501

  Huang, X D ^a   Sin, Johnny K O ^b   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

BaTiO3; charge trapping layer (CTL); nonvolatile memory; Zr incorporation

Indexed keywords

BATIO; CHARGE LOSS; DATA RETENTION; GATE VOLTAGES; MEMORY WINDOW; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION; ZR-DOPING;

BARIUM COMPOUNDS; C (PROGRAMMING LANGUAGE); SEMICONDUCTOR DOPING;

ZIRCONIUM;

EID: 84875669256     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2244557     Document Type: Article

References (14)

1. J. Y. Wu, Y. T. Chen, M. H. Lin, and T. B. Wu, "Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition," IEEE Electron Device Lett., vol. 31, no. 9, pp. 993-995, Sep. 2010.
2. S. H. Lin, A. Chin, F. S. Yeh, and S. P.McAlister, "Good 150 C retention and fast erase charge-crapping-engineered memory with scaled Si3N4," in IEDM Tech. Dig., 2008, pp. 1-4.
3. Y. H. Wu, L. L. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, "Nitrided tetragonal ZrO2 as the charge-trapping layer for nonvolatile memory application," IEEE Electron Devices Lett., vol. 30, no. 12, pp. 1290-1292, Dec. 2009.
4. C. X. Zhu, Z. L. Huo, Z. G. Xu,M. H. Zhang, Q.Wang, J. Liu, S. B. Long, and M. Liu, "Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer," Appl. Phys. Lett., vol. 97, no. 25, pp. 253503-1-253503-3, Dec. 2010.
5. W. S. Choi, B. S. Jang, D. G. Lim, J. Yi, and B. Hong, "Characterization of Ba(Zr0.2Ti0.8)O3 thin films deposited by RF-magnetron sputtering," J. Cryst. Growth, vol. 237-239, pp. 438-442, Apr. 2002. (Pubitemid 34544292)
6. F. M. Pontes, M. T. Escote, C. C. Escudeiro, E. R. Leite, E. Longo, A. J. Chiquito, P. S. Pizani, and J. A. Varela, "Characterization of BaTi1?xZrxO3 thin films obtained by a soft chemical spin-coating technique," J. Appl. Phys., vol. 96, no. 8, pp. 4386-4391, Oct. 2004.
7. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, May 2001. (Pubitemid 33598307)
8. D. Brassard, D. K. Sarkar, and M. A. El Khahani, "Compositional effect on the dielectric properties of high-k titanium silicate thin films deposited by means of a cosputtering process," J. Vac. Sci. Technol. A, vol. 24, no. 3, pp. 600-605, May 2006.
9. J. Roberson, "Energy levels of point defects in SrTiO3 and related oxides," J. Appl. Phys., vol. 93, no. 2, pp. 1054-1059, Jan. 2003.
10. Y. Liu, S. Tang, and S. K. Banerjee, "Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot Flash memory," Appl. Phys. Lett., vol. 88, no. 21, pp. 213504-1-213504-3, May 2006.
11. W. He, J. Pu, D. S. H. Chan, and B. J. Cho, "Performance improvement in charge-trap Flash memory using lanthanum-based high-k blocking oxide," IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2746-2751, Nov. 2009.
12. C. H. Chang and J. G. Hwu, "Trapping characteristics of Al2O3/HfO2/SiO2 stack structure prepared by low temperature in situ oxidation in dc sputtering," J. Appl. Phys., vol. 105, no. 9, pp. 094103-1-094103-6, May 2009.
13. G. Van den Bosch, L. Breuil, A. Cassiato, A. Rothschild, M. Jurczak, and J. Van Houdt, "Investigation of window instability in program/erase cycling of TANOS NAND Flash memory," in Proc. IEEE Int. Memory Workshop, 2009, pp. 1-2.
14. L. M. Terman, "An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid-State Electron., vol. 5, no. 5, pp. 285-299, Sep./Oct. 1962.