Epitaxial GaN 1-yAs y layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1489-1491

  Kimura, Akitaka ^a,c   Paulson, C A ^b   Tang, H F ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; OPTICAL BAND GAP;

ADSORPTION; FUNCTIONS; MOLECULAR BEAM EPITAXY; PHASE COMPOSITION; PHOTONS; REFRACTIVE INDEX; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 1642588410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652232     Document Type: Article

References (8)

1. M. Kondow, K. Uomi, A. Niwa, and T. Kitatani, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
2. S. Sakai, Y. Ueta, and Y. Terauchi, Jpn. J. Appl. Phys., Part 1 32, 4413 (1993).
3. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 51, 10568 (1995).
4. S. V. Novikov, A. J. Winser, A. Bell, I. Harrison, T. Li, R. P. Campion, C. R. Staddon, C. S. Davis, F. A. Ponce, and C. T. Foxon, J. Cryst. Growth 240, 423 (2002).
5. M. Gherasimova, B. Gaffey, P. Mitev, L. J. Guido, K. L. Chang, K. C. Hsieh, S. Mitha, and J. Spear, MRS Internet J. Nitride Semicond. Res. 4S1, G3. 44 (1999).
6. K. Iwata, H. Asahi, K. Asami, R. Kuroiwa, and S. Gonda, Jpn. J. Appl. Phys., Part 1 37, 1436 (1998).
7. A. Kimura, H. F. Tang, and T. F. Kuech, J. Cryst. Growth (in press).
8. Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, Y. Kishi, and Y. Kuwano, Jpn. J. Appl. Phys., Part 1 30, 1008 (1991).