On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 5, 2005, Pages 1089-1098

  Bank, S R ^a   Goddard, L L ^a   Wistey, M A ^a   Yuen, H B ^a   Harris Jr , J S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

1.5 mum; Auger recombination; Carrier leakage; External efficiency; Fermi level; GaInNAsSb; GaInNAsSb lasers; Intervalence band absorption; Monomolecular recombination; Spontaneous emission spectrum; Temperature sensitivity; Threshold current density

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; FERMI LEVEL; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

AUGER RECOMBINATION; CARRIER LEAKAGE; EXTERNAL EFFICIENCY; GAINNASSB; GAINNASSB LASERS; INTERVALENCE BAND ABSORPTION; MONOMOLECULAR RECOMBINATION; SPONTANEOUS EMISSION SPECTRUM; TEMPERATURE SENSITIVITY; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 31644450819     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853852     Document Type: Article

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