Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1847-1849

  Yu, K M ^a   Novikov, S V ^b   Broesler, R ^a,c   Staddon, C R ^b   Hawkridge, M ^a   Liliental Weber, Z ^a   Demchenko, I ^a,d,e   Denlinger, J D ^a   Kao, V M ^a   Luckert, F ^f   Martin, R W ^f   Walukiewicz, W ^a   Foxon, C T ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c University of California Berkeley   (United States)

^d UNIVERSITY OF NEVADA   (United States)

^e INSTITUTE OF PHYSICS   (Poland)

^f UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Band structure; GaNAs; MBE; Morphology; Optical properties; Structure

Indexed keywords

BAND GAP ENERGY; BAND GAPS; COMPOSITION RANGES; ENERGY RANGES; GANAS; HOMOGENEOUS COMPOSITION; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; MBE; NEW ALLOYS; NON EQUILIBRIUM; OPTICAL ABSORPTION EDGE; STRUCTURE; UPWARD MOVEMENT;

AMORPHOUS ALLOYS; AMORPHOUS FILMS; ELECTRON MOBILITY; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; OPTICAL PROPERTIES;

GALLIUM ALLOYS;

EID: 77955802580     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983430     Document Type: Conference Paper

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