Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films

Solid State Communications

Volumn 148, Issue 9-10, 2008, Pages 448-451

  Zhang, Y J ^a   Wang, J B ^a   Zhong, X L ^a   Zhou, Y C ^a   Yuan, X L ^b   Sekiguchi, T ^b  

^a XIANGTAN UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A. ZnO thin films; B. Sol gel; D. Ferroelectric properties; D. Optical properties

Indexed keywords

COLLOIDS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); FERROELECTRIC FILMS; FERROELECTRICITY; GELATION; GELS; HYSTERESIS; LUMINESCENCE; MAGNETIC MATERIALS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLIDS; SOLS; SPIN COATING; THICK FILMS; THIN FILMS; ZINC; ZINC ALLOYS; ZINC OXIDE;

A. ZNO THIN FILMS; ACCEPTOR BOUND EXCITONS; B. SOL-GEL; COATING METHODS; D. FERROELECTRIC PROPERTIES; D. OPTICAL PROPERTIES; DOPING PROCESSES; FERROELECTRIC PROPERTIES; LOW TEMPERATURES; LUMINESCENT EFFICIENCIES; LUMINESCENT PEAKS; O THIN FILMS; POLARIZATION HYSTERESIS LOOPS; REMNANT POLARIZATIONS; SI SUBSTRATES; ZNO THIN FILMS;

LITHIUM;

EID: 54049126442     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.09.014     Document Type: Article

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