SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 20, 2012, Pages

Unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt resistive random access memory devices controlled by various defect types

(8) Lin, Chun Cheng a Tseng, Zong Liang a Lo, Kuang Yao a Huang, Chih Yu b Hong, Cheng Shong b Chu, Sheng Yuan a,c Chang, Chia Chiang c Wu, Chin Jyi c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL KAOHSIUNG NORMAL UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; DEFECT TYPE; DOPING CONCENTRATION; HIGH-RESISTANCE STATE; LI CONTENT; LI-DOPANTS; OHMIC BEHAVIOR; POOLE-FRENKEL; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING BEHAVIORS;

DEFECTS; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS;

ZINC;

EID: 84870015765 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4766725 Document Type: Article

Times cited : (29)

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