Direct growth of cubic AlN and GaN on Si (001) with plasma-assisted MBE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2589-2592

  Ohachi, T ^a   Kikuchi, T ^a   Ito, Y ^a   Takagi, R ^a   Hogiri, M ^a   Miyauchi, K ^a   Wada, M ^a   Ohnishi, Y ^b   Fujita, K ^b  

^a DOSHISHA UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT GROWTH; LATTICE-MISMATCHED; LOW TEMPERATURE BUFFER LAYERS; NITROGEN SOURCES; PLASMA-ASSISTED MBE; RADIO FREQUENCIES; SI SUBSTRATES; STRUCTURED MATERIALS;

EPITAXIAL GROWTH; GALLIUM NITRIDE; NITROGEN PLASMA; SILICON; SILICON NITRIDE; X RAY DIFFRACTION; ZINC SULFIDE;

ALUMINUM NITRIDE;

EID: 84875122837     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303336     Document Type: Conference Paper

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