Crystal growth and optical property of GaN on silica glass by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 SUPPL. B, 1998, Pages

  Murata, Naoya ^a   Tochishita, Hikari ^a   Shimizu, Yuui ^a   Araki, Tsutomu ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Columnar growth; ECR MBE; GaN; Photoluminescence; Silica glass substrate

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; FILM GROWTH; FUSED SILICA; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032181584     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1214     Document Type: Article

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