Characterization of aluminum nitride thin films on silicon substrates grown by plasma assisted molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5507-5512

  Hong, Sung Ui ^a   Paek, Mun Cheol ^a   Han, Gee Pyeong ^a   Sohn, Young Joon ^a   Kim, Tae Youb ^b   Cho, Kyoung Ik ^b   Shim, Kyu Hwan ^b   Yoon, Soon Gil ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

AlN; Crystalline coherency; Growth model; PAMBE; Si

Indexed keywords

ALUMINUM COMPOUNDS; FILM GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SILICON; SINGLE CRYSTALS;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PAMBE);

THIN FILMS;

EID: 0036757997     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5507     Document Type: Article

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