Electronic properties of light-emitting p-n hetero-junction array consisting of p+-Si and aligned n-ZnO nanowires

Journal of Applied Physics

Volumn 113, Issue 8, 2013, Pages

  Bae, Min Young ^a   Min, Kyung Whon ^a   Yoon, Jangyeol ^a   Kim, Gyu Tae ^a   Ha, Jeong Sook ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; ENERGY-BAND DIAGRAM; FORWARD CURRENTS; HETEROJUNCTION DEVICES; NANOWIRES (NWS); RECTIFICATION BEHAVIOR; RECTIFICATION RATIO; TURN-ON VOLTAGES;

BIAS VOLTAGE; ELECTRONIC PROPERTIES; NANOWIRES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON; ZINC OXIDE;

ELECTRIC RECTIFIERS;

EID: 84874872903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792302     Document Type: Article

References (36)

1. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007). 10.1021/nl070111x
2. S. N. Das, J. H. Choi, J. P. Kar, K. J. Moon, T. I. Lee, and J. M. Myoung, Appl. Phys. Lett. 96, 092111 (2010). 10.1063/1.3339883
3. S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, Adv. Mater. 22, 4749 (2010). 10.1002/adma.201002134
4. R. Ghosh and D. Basak, Appl. Phys. Lett. 90, 243106 (2007). 10.1063/1.2748333
5. O. Lupan, T. Pauporte, and B. Viana, J. Phys. Chem. C 114, 14781 (2010). 10.1021/jp104684m
6. K. Seo, T. Lim, S. Kim, H. L. Park, and S. Ju, Nanotechnology 21, 255201 (2010). 10.1088/0957-4484/21/25/255201
7. M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, Nano Lett. 10, 4387 (2010). 10.1021/nl101907h
8. Z. L. Wang and J. Song, Science 312, 242 (2006). 10.1126/science.1124005
9. X. Wang, J. Song, J. Liu, and Z. L. Wang, Science 316, 102 (2007). 10.1126/science.1139366
10. Z. L. Wang, Adv. Mater. 19, 889 (2007). 10.1002/adma.200602918
11. Z. L. Wang, Adv. Mater. 21, 1311 (2009). 10.1002/adma.200802638
12. C. Y. Chen, J. H. Huang, J. Song, Y. Zhou, L. Lin, P. C. Huang, Y. Zhang, C. P. Liu, J. H. He, and Z. L. Wang, ACS Nano 5, 6707 (2011). 10.1021/nn202251m
13. Y. Hu, Y. Zhang, C. Xu, L. Li, R. L. Snyder, and Z. L. Wang, Nano Lett. 11, 2572 (2011). 10.1021/nl201505c
14. Z. L. Wang, Adv. Funct. Mater. 18, 3553 (2008). 10.1002/adfm.200800541
15. S. N. Cha, J. S. Seo, S. M. Kim, H. J. Kim, Y. J. Park, S. W. Kim, and J. M. Kim, Adv. Mater. 22, 4726 (2010). 10.1002/adma.201001169
16. X. Wang, J. Song, P. Li, J. H. Ryou, R. D. Dupuis, C. J. Summers, and Z. L. Wang, J. Am. Chem. Soc. 127, 7920 (2005). 10.1021/ja050807x
17. K. Wang, J. Chen, W. Zhou, Y. Zhang, Y. Yan, J. Pern, and A. Mascarenhas, Adv. Mater. 20, 3248 (2008). 10.1002/adma.200800145
18. C. H. Lee, Y. J. Kim, Y. J. Hong, S. R. Jeon, S. Bae, B. H. Hong, and G. C. Yi, Adv. Mater. 23, 4614 (2011). 10.1002/adma.201102407
19. S. Mridha and D. Basak, J. Appl. Phys. 101, 083102 (2007). 10.1063/1.2724808
20. M. Riaz, J. Song, O. Nur, Z. L. Wang, and M. Willander, Adv. Funct. Mater. 21, 628 (2011). 10.1002/adfm.201001203
21. L. J. Brillson, H. L. Mosbaker, and M. J. Hetzer, Appl. Phys. Lett. 90, 102116 (2007). 10.1063/1.2711536
22. G. T. Kim, J. Muster, M. Burghard, and S. Roth, Mater. Res. Soc. Symp. Proc. 703, 505 (2001). 10.1557/PROC-703-V13.4
23. K. W. Min, Y. K. Kim, G. Shin, S. Jang, M. Han, J. Huh, G. T. Kim, and J. S. Ha, Adv. Funct. Mater. 21, 119 (2011). 10.1002/adfm.201001678
24. J. Yoon, J. Park, J. Kim, G. T. Kim, and J. S. Ha, Adv. Funct. Mater. 21, 2515 (2011). 10.1002/adfm.201100265
25. P. Kanungo, R. Kögler, P. Werner, U. Gösele, and W. Skorupa, Nanoscale Res. Lett. 5, 243 (2010). 10.1007/s11671-00909472-x
26. Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, Appl. Phys. Lett. 92, 121908 (2008). 10.1063/1.2902299
27. J. H. He, S. H. Te, T. B. Wu, L. J. Chen, and Z. L. Wang, Chem. Phys. Lett. 435, 119 (2007). 10.1016/j.cplett.2006.12.061
28. J. Ye, Y. Zhao, L. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, Appl. Phys. Lett. 98, 263101 (2011). 10.1063/1.3587576
29. D. M. Kim, Introductory Quantum Mechanics for Semiconductor Nanotechnology (Wiley VCH, 2010).
30. Z. Y. Zhang and C. H. Jin, Appl. Phys. Lett. 88, 073102 (2006). 10.1063/1.2177362
31. A. Soudi, P. Dhakal, and Y. Gua, Appl. Phys. Lett. 96, 253115 (2010). 10.1063/1.3456390
32. H. W. Ra, K. S. Choi, C. W. Ok, S. Y. Jo, K. H. Bai, and Y. H. Im, Appl. Phys. Lett. 93, 033112 (2008). 10.1063/1.2965109
33. O. Wunnicke, Appl. Phys. Lett. 89, 083102 (2006). 10.1063/1.2337853
34. W. Guo, Y. Yang, J. Qi, J. Zhao, and Y. Zhang, Appl. Phys. Lett. 97, 133112 (2010). 10.1063/1.3495939
35. J. M. Wagner, K. Seino, and F. Bechstedt, J. Vac. Sci. Technol. A 25, 1500 (2007). 10.1116/1.2779040
36. J. Qiu, X. Li, W. He, S. J. Park, H. K. Kim, Y. H. Hwang, J. H. Lee, and Y. D. Kim, Nanotechnology 20, 155603 (2009). 10.1088/0957-4484/20/15/155603